2SC5200 NPN Power Transistor

2SC5200 is a high-power NPN bipolar junction transistor (BJT) that can allow a maximum Collector current of 15A, Collector to Emitter voltage is 250V, and has a power dissipation of 150W in a TO-264 package. Usually, it is used in Amplifier designs circuit.

Before using the 2SC5200 transistor in a project or electronic circuit, you should know its pinout configuration, features, equivalents, and more. So, here is the detailed information about the 2SC5200.

Pinout of 2SC5200

The pinout configuration of the 2SC5200 transistor is as follows:

Pin Number	Pin Name	Description
1	Base	Base pin controls the biasing of the transistor.
2	Collector	Current flows in through collector pin.
3	Emitter	Current Drains out through emitter pin.

Features of 2SC5200

Type: NPN high-power BJT
Material: Si
Maximum Emitter to Base voltage, or V_EB: 5V
Maximum Collector to Base voltage, or V_CB: 230V
Maximum Collector to Emitter voltage, or V_CE: 230V
Maximum Collector Current, I_C: 15A
Maximum Base Current, I_B: 1.5A
Maximum Collector Power Dissipation, P_D: 150W
Maximum Operating Junction Temperature, T_j: 150 °C
Frequency, f_t: 300 MHz
Collector Capacitance, C_C: 4.5 pF
Forward Current Transfer Ratio, or h_FE: 55 to 160
Maximum Noise Figure, d_B: Low
Package: TO-264

2SC5200 Equivalents & Complementary

The equivalent 2SC5200 transistors are 2SC3320, 2SC5242, 2SD1313, FJL4315 and the complementary PNP transistor is 2SA1943.

The pin configuration of some transistors is different from the 2SC5200, check pin configuration before replacing in a circuit.

How to use 2SC5200 transistor?

To get the best performance with the 2SC5200 NPN power transistor, you should not drive the load more than 15A, and the collector-emitter voltage of the transistor must in under 230V.

Use a suitable base resistor (R_B), which provides the required current at the base of the 2SC5200. The value for this resistor can be calculated using the formula: R_B = V_EB / I_B. Where the 2SC5200 transistor value of V_EB should be 5V, and the Base current I_B depends on the Collector current I_C.

The value of I_B should not exceed 1.5A. Also, you should not operate this transistor below -55 °C and above +150 °C.